STD80N450K6

STMicroelectronics
511-STD80N450K6
STD80N450K6

Mfr.:

Description:
MOSFETs N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about STMicroelectronics STD80N450K6

In Stock: 816

Stock:
816 Can Dispatch Immediately
Factory Lead Time:
13 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
26,78 kr. 26,78 kr.
17,61 kr. 176,10 kr.
13,13 kr. 1.313,00 kr.
11,71 kr. 5.855,00 kr.
10,00 kr. 10.000,00 kr.
Full Reel (Order in multiples of 2500)
9,40 kr. 23.500,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
800 V
10 A
450 mOhms
- 30 V, 30 V
3 V
17.3 nC
- 55 C
+ 150 C
83 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 12.7 ns
Product Type: MOSFETs
Rise Time: 4 ns
Factory Pack Quantity: 2500
Subcategory: Transistors
Typical Turn-Off Delay Time: 28.8 ns
Typical Turn-On Delay Time: 10.6 ns
Unit Weight: 330 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
MXHTS:
8541299900
ECCN:
EAR99

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

STD80N450K6 800V 10A MDmesh K6 Power MOSFET

STMicroelectronics STD80N450K6 800V 10A MDmesh K6 Power MOSFET is a high voltage N-channel Power MOSFET featuring Zener protection and 100% avalanche. This MOSFET also features ultra-low gate charge, ±30V gate-source voltage, 83W total power dissipation, worldwide RDS(ON) x area, and worldwide Figure Of Merit (FOM). The MOSFET operates from -55°C to 150°C junction temperature range and is available in DPAK (TO-252) type A2 package. Typical applications include flyback converters, LED lighting, and adapters for tablets, and notebooks.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.