Results: 24
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L 1.292In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L 569In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L 430In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L 1.824In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L 3.923In Stock
Min.: 1
Mult.: 1
Reel: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 40MOHM 1200V 1.511In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 40MOHM 1200V 1.014In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V 2.060In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART 2.176In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS 20MOHM 900V 1.861In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 900 V 112 A 28 mOhms - 8 V, + 22 V 4.3 V 200 nC - 55 C + 175 C 477 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 20MOHM 1200V 257In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 80MOHM 1200V 686In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement EliteSiC

onsemi SiC MOSFETs 60MOHM 900V 1.230In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L 1.595In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOSFET 900V TO247-4L 60MOHM 314In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS 60MOHM 900V 1.276In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 900 V 44 A 84 mOhms - 8 V, + 22 V 4.3 V 88 nC - 55 C + 175 C 211 W Enhancement EliteSiC
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L 828In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS 20MW 1200V 1.471In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement EliteSiC

onsemi SiC MOSFETs 20MW 1200V 723In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L 212In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4 N-Channel 1 Channel 650 V 142 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 150 C 500 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 80MOHM 1200V 253In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 29 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi SiC MOSFETs 20MOHM 900V 370In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 503 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-3L 40MOHM 1200V 635In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V 990In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC