NVMTS1D1N08XTXG

Name: onsemi NVMTS1D1N08XTXG
Brand: onsemi
SKU: 863-NVMTS1D1N08XTXG
Price: 35.81 DKK
Availability: OutOfStock

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Mouser No:

863-NVMTS1D1N08XTXG

Mfr. No:

NVMTS1D1N08XTXG

Mfr.:

onsemi

Description:

MOSFETs T10 80V SG PQFN 88

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NVMTS1D1N08XTXG Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDFNW-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	352 A
Rds On - Drain-Source Resistance:	1 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	121 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Brand:	onsemi
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	154 S
Product Type:	MOSFETs
Rise Time:	24 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	35 ns

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Datasheet

NVMTS1D1N08XTXG Datasheet (PDF)

Origin Classifications

Country of Origin:: Not available
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

NVMTS1D1N08X N‐Channel Power MOSFETs

onsemi NVMTS1D1N08X N-Channel Power MOSFETs provide high-current switching for automotive power conversion and motor control applications. The MOSFETs combine low on-resistance with low gate charge and capacitance to minimize conduction and driver losses. A low-reverse-recovery-charge body diode with soft recovery supports efficient switching in demanding power systems.

FEATURED PRODUCTS

ONSEMI

NVMTS1D1N08X N‐Channel Power MOSFETs

80V automotive MOSFETs with low on-resistance and soft-recovery body diode.

Learn More

80V Single N-Channel Power MOSFETs

Offer low R_DS(on) to minimize conduction losses & low QG and capacitance to minimize driver losses.

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NVNJWS1K6N061L N-Channel MOSFET

Features low R_DS(on) and low gate threshold with integrated ESD protection.

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NVBYST0D8N08X Single N-Channel Power MOSFET

Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

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NTMFD0D9N02P1E MOSFET

Dual N-channel MOSFET designed with low R_g for fast switching applications.

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Availability

Stock:: 0

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On Order:: 3.000

Expected 11/06/2027
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	35,81 kr.	35,81 kr.
	21,41 kr.	214,10 kr.
	17,23 kr.	1.723,00 kr.
	14,77 kr.	7.385,00 kr.
	14,17 kr.	14.170,00 kr.
	12,01 kr.	36.030,00 kr.

NVMTS1D1N08XTXG

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Mfr.: onsemi

Description: MOSFETs T10 80V SG PQFN 88

Specifications

Documents (1)

Datasheet

Product & Trade Compliance

More Information

NVMTS1D1N08X N‐Channel Power MOSFETs

FEATURED PRODUCTS ONSEMI

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Pricing (DKK)

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Mfr.:

onsemi

Description:

MOSFETs T10 80V SG PQFN 88

FEATURED PRODUCTS

ONSEMI