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NVMFD027N10MCLT1G

Name: onsemi NVMFD027N10MCLT1G
Brand: onsemi
SKU: 863-VMFD027N10MCLT1G
Price: 12.91 DKK
Availability: InStock

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Mouser No:

863-VMFD027N10MCLT1G

Mfr. No:

NVMFD027N10MCLT1G

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V LL SO8FL DUAL

Datasheet:

NVMFD027N10MCLT1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMFD027N10MCLT1G

In Stock: 777

Stock:: 777 Can Dispatch Immediately

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Factory Lead Time:: 43 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Unit Price:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	12,91 kr.	12,91 kr.
	8,28 kr.	82,80 kr.
	5,57 kr.	557,00 kr.
	4,43 kr.	2.215,00 kr.
	3,89 kr.	3.890,00 kr.
Full Reel (Order in multiples of 1500)
	3,89 kr.	5.835,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	138 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	11 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	164 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	3.2 ns
Forward Transconductance - Min:	27 S
Product Type:	MOSFETs
Rise Time:	2.5 ns
Series:	NVMFD027N10MCL
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	7 ns

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Datasheet

NVMFD027N10MCLT1G Datasheet

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NVMFD027N10MCL Dual N-Channel Power MOSFET

onsemi NVMFD027N10MCL Dual N-Channel Power MOSFET is a 100V, 28A, 26mΩ Automotive Power MOSFET designed for compact and efficient designs. The AEC-Q101-qualified and PPAP-capable device is housed in a 5mm x 6mm flat lead package with a wettable flank option available for enhanced optical inspection. The onsemi NVMFD027N10MCL MOSFET features high thermal performance and low R_DS(on) to minimize conduction losses.