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SQS660CENW-T1_GE3

Name: Vishay SQS660CENW-T1_GE3
Brand: Vishay / Siliconix
SKU: 78-SQS660CENW-T1_GE3
Price: 8.5 DKK
Availability: InStock

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Mouser No:

78-SQS660CENW-T1_GE3

Mfr. No:

SQS660CENW-T1_GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET

Datasheet:

SQS660CENW-T1_GE3 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SQS660CENW-T1_GE3

In Stock: 60.078

Stock:: 60.078 Can Dispatch Immediately

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Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	8,50 kr.	8,50 kr.
	5,36 kr.	53,60 kr.
	3,55 kr.	355,00 kr.
	2,78 kr.	1.390,00 kr.
	2,52 kr.	2.520,00 kr.
Full Reel (Order in multiples of 3000)
	2,20 kr.	6.600,00 kr.
	2,09 kr.	12.540,00 kr.
	2,04 kr.	18.360,00 kr.
	2,00 kr.	48.000,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8W
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	11.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	17.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	62.5 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	26 S
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	SQS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	12 ns

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Datasheet

SQS660CENW-T1_GE3 Datasheet

Models

R-C Thermal Model Parameters

Technical Resources

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SQS660CENW Automotive N-Ch 60V MOSFET

Vishay / Siliconix SQS660CENW Automotive N-Ch 60V MOSFET is an AEC-Q101 qualified TrenchFET^® power MOSFET. The SQS660CENW is specified at 18A I_D and 60V V_DS. The single configuration device is offered in a PowerPAK^® 1212-8W package with an operating junction and storage temperature range of -55°C to +175°C.