NVXK2TR40WXT

onsemi
863-NVXK2TR40WXT
NVXK2TR40WXT

Mfr.:

Description:
MOSFET Modules APM32 SIC H-BRIDGE POWER MODULE

Lifecycle:
New At Mouser
ECAD Model:
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In Stock: 44

Stock:
44 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
488,41 kr. 488,41 kr.
406,27 kr. 4.062,70 kr.
370,02 kr. 44.402,40 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFET Modules
RoHS:  
SiC
Through Hole
APM-32
N-Channel
4 Channel
1.2 kV
27 A
59 mOhms
- 15 V, + 25 V
4.3 V
- 55 C
+ 175 C
319 W
NVXK2TR40WXT
Tube
Brand: onsemi
Configuration: Dual Half-Bridge
Fall Time: 9 ns
Height: 5.8 mm
Length: 44.2 mm
Product Type: MOSFET Modules
Rise Time: 20 ns
Factory Pack Quantity: 60
Subcategory: Discrete and Power Modules
Tradename: EliteSiC
Type: Half-Bridge
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 17 ns
Width: 29 mm
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Attributes selected: 0

CNHTS:
8504409100
ECCN:
EAR99

NVXK2TR40WXT Silicon Carbide (SiC) Module

onsemi NVXK2TR40WXT Silicon Carbide (SiC) Module is a 1200V, 40mΩ, and 27A dual half-bridge EliteSiC power module housed in a APM32 Dual Inline Package (DIP). This SiC module is compactly designed to have a low total module resistance. The NVXK2TR40WXT power module is automotive-qualified per AEC-Q101 and AQG324. This power module is lead-free, ROHS, and UL94V-0 compliant. The NVXK2TR40WXT EliteSiC MOSFET power module is ideally used in DC-DC and onboard chargers in xEV applications.