SIA429DJT-T1-GE3

Vishay Semiconductors
781-SIA429DJT-T1-GE3
SIA429DJT-T1-GE3

Mfr.:

Description:
MOSFETs -20V Vds 8V Vgs Thin PowerPAK SC-70

Datasheet:
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In Stock: 3.270

Stock:
3.270 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
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Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
5,71 kr. 5,71 kr.
3,53 kr. 35,30 kr.
2,29 kr. 229,00 kr.
1,76 kr. 880,00 kr.
1,58 kr. 1.580,00 kr.
Full Reel (Order in multiples of 3000)
1,36 kr. 4.080,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SC-70-6
P-Channel
1 Channel
20 V
12 A
20.5 mOhms
- 8 V, 8 V
1 V
62 nC
- 55 C
+ 150 C
3.5 W
Enhancement
TrenchFET, PowerPAK
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Configuration: Single
Product Type: MOSFETs
Series: SIA
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: SIA429DJT-GE3
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541210000
USHTS:
8541290065
JPHTS:
8541210101
KRHTS:
8541219000
MXHTS:
85412101
ECCN:
EAR99

SiA429DJT 20V P-Channel MOSFETs

Vishay / Siliconix SiA429DJT 20V P-Ch TrenchFET® Power MOSFETs offer a low on-resistance for a P-Channel device with a sub-0.8mm profile. Vishay / Siliconix SiA429DJT TrenchFET Power MOSFETs come in a thermally enhanced Thin PowerPAK® SC-70 package with an ultra-low 0.6mm profile. The SiA429DJT is ideal for DC/DC converters and load and charger switches. The lower on-resistance translates into lower conduction losses.

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