NVMFS5830NLWFT1G-UM

onsemi
863-FS5830NLWFT1G-UM
NVMFS5830NLWFT1G-UM

Mfr.:

Description:
MOSFETs Power MOSFET 40V, 185A, 2.3 mOhm, Single N-Channel, SO8-FL, Logic Level.

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about onsemi NVMFS5830NLWFT1G-UM

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1.500
Expected 10/04/2026
Factory Lead Time:
40
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
19,02 kr. 19,02 kr.
12,31 kr. 123,10 kr.
9,10 kr. 910,00 kr.
7,61 kr. 3.805,00 kr.
6,54 kr. 6.540,00 kr.
Full Reel (Order in multiples of 1500)
6,54 kr. 9.810,00 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DFN-5
N-Channel
1 Channel
40 V
185 A
2.3 mOhms
20 V
2.4 V
113 nC
- 55 C
+ 175 C
158 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 27 ns
Forward Transconductance - Min: 38 S
Product Type: MOSFETs
Rise Time: 32 ns
Series: NVMFS5830NL
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 22 ns
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Attributes selected: 0

Datasheet

TARIC:
8541290000
ECCN:
EAR99

NVMx & NVTx Power MOSFETs

onsemi NVMx and NVTx Power MOSFETs are AEC−Q101 Qualified and offer compact and efficient solutions for automotive applications. NVMx and NVTx Power MOSFETs offer Low RDS(on) to minimize conduction losses and low QG and Capacitance to minimize driver losses. These onsemi single N-Channel MOSFETs are housed in a compact, SO-8FL, and WDFN8 packages and are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant.

N-Channel 40V & 60V Automotive Power MOSFETs

onsemi NVMFSCx Automotive Power 40V and 60V MOSFETs are available in 5mm x 6mm dual-sided cooled packages ideal for compact and efficient designs. The single N-Channel devices feature 1.5mΩ and 0.9mΩ RDS(on) drain-source on-resistance to minimize conductive losses. The MOSFETs includes a wettable flank option available for enhanced optical inspection. The devices are also AEC-Q101-qualified and PPAP-capable, making them suitable for automotive applications.

NVMFS5830NL Single N-Channel Power MOSFET

onsemi NVMFS5830NL Single N-Channel Power MOSFET is a high-efficiency power MOSFET designed for demanding power management applications. Utilizing advanced trench technology, the onsemi NVMFS5830NL delivers exceptionally low RDS(on) performance (2.3mΩ at VGS = 10V), making the MOSFET ideal for minimizing conduction losses in high-current systems. The 5mm x 6mm x 1mm, flat-lead SO-8FL package enhances thermal performance and board space efficiency, while the low gate charge and fast switching characteristics contribute to improved overall system efficiency. A wettable flank option is available for enhanced optical inspection. With the combination of high current capability, low switching losses, and a compact footprint, the NVMFS5830NL is well-suited for use in motor control applications and high-/low-side load switches.

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