DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

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Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Toshiba MOSFETs N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 2.7 V 20 nC - 55 C + 150 C 88.3 W Enhancement DTMOSIV Reel
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.000
Mult.: 2.000
Reel: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 11.1 A 350 mOhms - 30 V, 30 V 2.5 V 25 nC - 55 C + 150 C 100 W Enhancement DTMOSIV Reel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 11.5 A 300 mOhms - 30 V, 30 V 2.7 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 800V 1400pF 23nC 11.5A 165W
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11.5 A 380 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=100W F=1MHZ
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.000
Mult.: 2.000
Reel: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 11.5 A 340 mOhms - 30 V, 30 V 2.7 V 25 nC - 55 C + 150 C 100 W Enhancement DTMOSIV Reel
Toshiba MOSFETs DTMOSIV 600V 340mOhm 11.5A 100W 890pF
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1
Reel: 75

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 11.5 A 265 mOhms - 30 V, 30 V 3.7 V 25 nC - 55 C + 150 C 100 W DTMOSIV Reel, Cut Tape
Toshiba MOSFETs N-Ch DTMOSIV 600 V 104W 890pF 11.5A
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 11.5 A 300 mOhms 104 W DTMOSIV Reel
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs MOSFET NChannel 0.22ohm DTMOS
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 3.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

Si Through Hole TO-262-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel

Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DTMOS DFN8x8-OS PD=139W F=1MHZ
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 13.7 A 280 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 139 W Enhancement DTMOSIV Reel
Toshiba MOSFETs DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel
Toshiba MOSFETs TO-3PN(OS) PD=130W 1MHz PWR MOSFET TRNS
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 4.5 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV
Toshiba MOSFETs N-Ch DTMOSIV 600 V 139W 1350pF 15.8A
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 15.8 A 190 mOhms 139 W DTMOSIV Reel
Toshiba MOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.3 A 230 mOhms - 30 V, 30 V 4.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.3 A 170 mOhms - 30 V, 30 V 2.5 V 45 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DFN8x8-OS PD=156W 1MHz PWR MOSFET TRNS
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

Si SMD/SMT DFN-5 N-Channel 1 Channel 650 V 17.3 A 210 mOhms - 30 V, 30 V 3.5 V 45 nC - 55 C + 150 C 156 W Enhancement DTMOSIV Reel
Toshiba MOSFETs N-Ch DTMOSIV 600 V 156W 1680pF 20A
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 20 A 170 mOhms - 30 V, 30 V 2.7 V 48 nC - 55 C + 150 C 156 W Enhancement DTMOSIV Reel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220AB PD=230W F=1MHZ
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 27.6 A 110 mOhms - 30 V, 30 V 2.5 V 75 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube

Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 27.6 A 94 mOhms - 30 V, 30 V 2.5 V 75 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DFN 8 8 PD=240W F=1MHZ
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
Reel: 5.000

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 27.6 A 140 mOhms - 30 V, 30 V 3 V 90 nC - 55 C + 150 C 240 W Enhancement DTMOSIV Reel
Toshiba MOSFETs DFN8x8-OS PD=240W 1MHz PWR MOSFET TRNS
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

Si SMD/SMT DFN-5 N-Channel 1 Channel 650 V 27.6 A 120 mOhms - 30 V, 30 V 3.5 V 75 nC - 55 C + 150 C 240 W Enhancement DTMOSIV Reel
Toshiba MOSFETs N-Ch 30.8A 230W FET 600V 3000pF 105nC
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.7 V 86 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube