MMFTP2319

Diotec Semiconductor
637-MMFTP2319
MMFTP2319

Mfr.:

Description:
MOSFETs MOSFET, SOT-23, -40V, -4.2A, 150C, P

ECAD Model:
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In Stock: 3.382

Stock:
3.382 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
3,92 kr. 3,92 kr.
2,77 kr. 27,70 kr.
1,93 kr. 193,00 kr.
1,69 kr. 845,00 kr.
1,57 kr. 1.570,00 kr.
Full Reel (Order in multiples of 3000)
1,16 kr. 3.480,00 kr.
0,865 kr. 7.785,00 kr.
0,843 kr. 20.232,00 kr.
0,642 kr. 28.890,00 kr.

Product Attribute Attribute Value Select Attribute
Diotec Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-23-3
P-Channel
1 Channel
40 V
4.2 A
80 mOhms
- 20 V, 20 V
3 V
20 nC
- 55 C
+ 150 C
750 mW
Enhancement
Reel
Cut Tape
Brand: Diotec Semiconductor
Configuration: Single
Fall Time: 4 ns
Product Type: MOSFETs
Rise Time: 28 ns
Series: MMFTN/P
Factory Pack Quantity: 3000
Subcategory: Transistors
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 15 ns
Products found:
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Attributes selected: 0

Compliance Codes
TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
MXHTS:
8541210100
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

MMFTP2319 P-Channel Enhancement Mode FET

Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET offers fast switching times in a SOT-23/TO-236 package. The MMFTP2319 FET features a 40V maximum drain-source voltage, 750mW maximum power dissipation, and a 4.2A maximum drain current in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET is ideal for signal processing, battery management, drivers, and logic-level converters.