It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

PJQ5839E-AU_R2_002A1

Name: Panjit PJQ5839E-AU_R2_002A1
Brand: Panjit
SKU: 241-PJQ5839EAUR202A1
Price: 7.91 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

241-PJQ5839EAUR202A1

Mfr. No:

PJQ5839E-AU_R2_002A1

Mfr.:

Panjit

Description:

MOSFETs 30V Dual P-Channel Enhancement Mode MOSFET

Datasheet:

PJQ5839E-AU_R2_002A1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Panjit PJQ5839E-AU_R2_002A1

In Stock: 2.925

Stock:: 2.925 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	7,91 kr.	7,91 kr.
	4,93 kr.	49,30 kr.
	4,40 kr.	440,00 kr.
Full Reel (Order in multiples of 3000)
	4,40 kr.	13.200,00 kr.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252AA-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	30.7 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Panjit
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	40 ns
Product Type:	MOSFETs
Rise Time:	3 ns
Series:	PJQ
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	7 ns
Unit Weight:	92 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

PJQ5839E-AU_R2_002A1 Datasheet (PDF)

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

PJQ5839E-AU Dual P-Channel Enhancement Mode MOSFET

PANJIT PJQ5839E-AU Dual P-Channel Enhancement Mode MOSFET is a rugged MOSFET with a -30V drain-source voltage, ±25V gate-source voltage, and 30W power dissipation @T_C=25°C. This MOSFET also features -31A continuous drain current (@T_C=25°C), 60°C/W thermal resistance (junction to ambient), and -55°C to 175°C junction operating temperature range. The PJQ5839E-AU is AEC-Q101 qualified, 100% UIS tested, and lead-free in compliance with EU RoHS 2.0.

30V & 40V Automotive P-Channel MOSFETs

PANJIT 30V and 40V Automotive P-Channel MOSFETs are AEC-Q101 qualified MOSFETs with an ON resistance of 1Ω and a high junction temperature of 175°C. These P-channel MOSFETs are an ideal choice for automotive design engineers looking to simplify circuitry and enhance performance. The 30V to 40V P-channel MOSFETs are lead-free and EU RoHS 2.0 compliant. These P-channel MOSFETs are available in various packages, including DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, TO-263AB, and TO-263-7L. The 30V to 40V P-channel MOSFETs are 100% Unclamped Inductive Switching (UIS) tested. Typical applications include reverse polarity protection, battery-powered equipment, brushed DC motors, electronic steering, oil/water pumps, and primary 12V systems.