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RA1C030LDT5CL

Name: ROHM Semiconductor RA1C030LDT5CL
Brand: ROHM Semiconductor
SKU: 755-RA1C030LDT5CL
Price: 3.14 DKK
Availability: InStock

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Mouser No:

755-RA1C030LDT5CL

Mfr. No:

RA1C030LDT5CL

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor, MOSFET Nch, 20V(Vdss), 3.0A(Id), (2.5V Drive)

Datasheet:

RA1C030LDT5CL Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RA1C030LDT5CL

In Stock: 26.806

Stock:: 26.806 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	3,14 kr.	3,14 kr.
	2,50 kr.	25,00 kr.
	1,60 kr.	160,00 kr.
	1,21 kr.	605,00 kr.
	0,977 kr.	977,00 kr.
	0,865 kr.	4.325,00 kr.
	0,716 kr.	7.160,00 kr.
Full Reel (Order in multiples of 15000)
	0,709 kr.	10.635,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WLCSP-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	140 mOhms
Vgs - Gate-Source Voltage:	- 200 mV, 7 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	1.5 nC
Minimum Operating Temperature:	- 50 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	6 ns
Factory Pack Quantity:	15000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	6 ns
Part # Aliases:	RA1C030LD

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Datasheet

RA1C030LDT5CL Datasheet

Specification Sheets

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

RA1C030LD WLCSP MOSFET

ROHM Semiconductor RA1C030LD WLCSP MOSFET is an N-channel MOSFET designed with a low on-resistance and high power package. This device features a 20V_DSS drain-source voltage, 3A continuous drain current, and 1W power dissipation. The RA1C030LD MOSFET offers 1.8V drive voltage, Electro-Static Discharge (ESD) protection up to 200V (MM), and up to 2kV (HBM). This MOSFET is suitable for switching circuits, single-cell battery applications, and mobile applications. The RA1C030LD MOSFET is Pb-free, halogen-free, and RoHS-compliant device.