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RF6G035BGTCR

Name: ROHM Semiconductor RF6G035BGTCR
Brand: ROHM Semiconductor
SKU: 755-RF6G035BGTCR
Price: 4.36 DKK
Availability: InStock

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Mouser No:

755-RF6G035BGTCR

Mfr. No:

RF6G035BGTCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs SOT363 N-CH 40V 3.5A

Datasheet:

RF6G035BGTCR Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RF6G035BGTCR

In Stock: 2.739

Stock:: 2.739 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	4,36 kr.	4,36 kr.
	2,64 kr.	26,40 kr.
	1,69 kr.	169,00 kr.
	1,31 kr.	655,00 kr.
	1,17 kr.	1.170,00 kr.
Full Reel (Order in multiples of 3000)
	0,91 kr.	2.730,00 kr.
	0,85 kr.	5.100,00 kr.
	0,776 kr.	6.984,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-363T-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	3.5 A
Rds On - Drain-Source Resistance:	46 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	3.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	2.7 ns
Product Type:	MOSFETs
Rise Time:	4.4 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	11 ns
Typical Turn-On Delay Time:	5 ns

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Datasheet

RF6G035BGTCR Datasheet

Specification Sheets

Datasheet - Chinese (English language)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

RF6G035BG Power MOSFET

ROHM Semiconductor RF6G035BG Power MOSFET features 40V drain-source voltage (V_DSS) and ±3.5A continuous drain current (I_D). This N-channel MOSFET offers 46mΩ low on-resistance (R_DS(on)) and power dissipation of 1W (P_D). The RF6G035BG MOSFET operates within the -55°C to 150°C operating junction and storage temperature range and is available in a Halogen-free, small surface mount package (TUMT6 or SOT-363T). This RoHS-compliant device incorporates Pb-free plating. The RF6G035BG power MOSFET is suitable for switching, motor drives, and DC/DC converter applications.

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