STP80N1K1K6

STMicroelectronics
511-STP80N1K1K6
STP80N1K1K6

Mfr.:

Description:
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Tube
Brand: STMicroelectronics
Product Type: MOSFETs
Factory Pack Quantity: 1000
Subcategory: Transistors
Unit Weight: 2 g
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Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STP80N1K1K6 N-Channel Power MOSFET

STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology. The STMicroelectronics STP80N1K1K6 MOSFET offers top-notch on-resistance per area and gate charge. The device is ideal for high-power density and efficient applications.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

In Stock: 1.055

Stock:
1.055 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
16,34 kr. 16,34 kr.
8,06 kr. 80,60 kr.
7,18 kr. 718,00 kr.
5,74 kr. 2.870,00 kr.
5,45 kr. 5.450,00 kr.
5,24 kr. 10.480,00 kr.
4,97 kr. 24.850,00 kr.

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