SCT4013DRC15

ROHM Semiconductor
755-SCT4013DRC15
SCT4013DRC15

Mfr.:

Description:
SiC MOSFETs TO247 750V 105A N-CH SIC

Datasheet:
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In Stock: 402

Stock:
402 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
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Pricing (DKK)

Qty. Unit Price
Ext. Price
222,98 kr. 222,98 kr.
171,13 kr. 1.711,30 kr.
164,49 kr. 16.449,00 kr.
164,34 kr. 73.953,00 kr.
900 Quote

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
750 V
105 A
16.9 mOhms
- 4 V, + 21 V
4.8 V
170 nC
+ 175 C
312 W
Enhancement
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 17 ns
Forward Transconductance - Min: 32 S
Packaging: Tube
Product: MOSFET's
Product Type: SiC MOSFETS
Rise Time: 32 ns
Factory Pack Quantity: 450
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 82 ns
Typical Turn-On Delay Time: 17 ns
Part # Aliases: SCT4013DR
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Attributes selected: 0

Datasheet

Specification Sheets

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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4013DR N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4013DR N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance device designed for demanding power electronics applications. Featuring a drain-source voltage rating of 750V and a 105A continuous drain current (at +25°C), this device offers exceptional efficiency and thermal performance. The low on-resistance of 13mΩ (typical) and fast switching characteristics make the ROHM SCT4013DR ideal for high-frequency applications such as power supplies, inverters, and motor drives. The SCT4013DR also benefits from the inherent advantages of SiC technology, including a high breakdown voltage, low switching losses, and superior thermal conductivity, which contribute to reduced system size and improved reliability. Packaged in a TO-247-4L case, the MOSFET supports robust thermal management and ease of integration into existing designs.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.

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