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STGWA30M65DF2AG

Name: STMicroelectronics STGWA30M65DF2AG
Brand: STMicroelectronics
SKU: 511-STGWA30M65DF2AG
Price: 27.38 DKK
Availability: InStock

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Mouser No:

511-STGWA30M65DF2AG

Mfr. No:

STGWA30M65DF2AG

Mfr.:

STMicroelectronics

Description:

IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STGWA30M65DF2AG Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGWA30M65DF2AG

In Stock: 766

Stock:: 766 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	27,38 kr.	27,38 kr.
	17,98 kr.	179,80 kr.
	13,43 kr.	1.611,60 kr.
	11,94 kr.	6.089,40 kr.
	10,22 kr.	10.424,40 kr.
	9,62 kr.	24.242,40 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	2.02 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	87 A
Pd - Power Dissipation:	441 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	57 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBTs
Factory Pack Quantity:	30
Subcategory:	Transistors
Unit Weight:	6,100 g

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Datasheet

STGWA30M65DF2AG Datasheet (PDF)

PCN

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

STGWA30M65DF2AG Automotive-Grade IGBT

STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBT is designed using an advanced proprietary trench gate field stop structure. The STMicroelectronics STGWA30M65DF2AG offers an optimal system performance and efficiency balance for inverters, with low-loss and essential short-circuit functionality. The device is AEC-Q101 qualified and features a maximum junction temperature of +175°C, a 6μs short circuit withstand time, low V_CE(sat) of 1.7V at 30A, and tight parameter distribution. The device also includes a soft, fast-recovery antiparallel diode and low thermal resistance and is available in a TO-247 long leads package.