It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVHL070N120M3S

Name: onsemi NVHL070N120M3S
Brand: onsemi
SKU: 863-NVHL070N120M3S
Price: 102.8 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NVHL070N120M3S

Mfr. No:

NVHL070N120M3S

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-3L 70MOHM 1200V M3

Datasheet:

NVHL070N120M3S Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVHL070N120M3S

In Stock: 439

Stock:: 439 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	102,80 kr.	102,80 kr.
	72,66 kr.	726,60 kr.
	62,37 kr.	7.484,40 kr.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	34 A
Rds On - Drain-Source Resistance:	87 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.4 V
Qg - Gate Charge:	57 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	160 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	KR
Country of Origin:	CN
Fall Time:	9.6 ns
Forward Transconductance - Min:	12 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	24 ns
Series:	NVHL070N120M3S
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	10 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVHL070N120M3S Datasheet

PCN

Product Change Notification 2025-9-26 (PDF)

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NVHL070N120M3S EliteSiC Automotive SiC MOSFET

onsemi NVHL070N120M3S EliteSiC Automotive Silicone Carbide (SiC) MOSFET is a 1200V M3S planar device optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. This device delivers optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive.

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.