LTC4296AUK-1#PBF

Name: Analog Devices Inc. LTC4296AUK-1#PBF
Brand: Analog Devices
SKU: 584-LTC4296AUK-1#PBF
Price: 143.53 DKK
Availability: InStock

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Mouser No:

584-LTC4296AUK-1#PBF

Mfr. No:

LTC4296AUK-1#PBF

Mfr.:

Analog Devices

Description:

Power Switch ICs - POE/LAN Power-over-Data_Lines PSE Controller

Datasheet:

LTC4296AUK-1#PBF Datasheet

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In Stock: 126

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Factory Lead Time:: 10 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	143,53 kr.	143,53 kr.
	112,35 kr.	1.123,50 kr.
	106,16 kr.	2.654,00 kr.
	99,44 kr.	9.944,00 kr.
	95,94 kr.	24.944,40 kr.
	93,70 kr.	48.724,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Analog Devices Inc.
Product Category:	Power Switch ICs - POE/LAN
RoHS:
Type:	Power Sourcing Equipment - PSE
Standard:	802.3cg
Operating Supply Voltage:	6 V to 60 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Mounting Style:	SMD/SMT
Package/Case:	QFN-48
Packaging:	Tray
Brand:	Analog Devices
Moisture Sensitive:	Yes
Number of Channels:	5 Channel
Operating Supply Current:	80 mA
Output Power:	52 W, 79 W
Product Type:	Power Switch ICs - POE / LAN
Series:	LTC4296-1
Factory Pack Quantity:	260
Subcategory:	Switch ICs

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Datasheet

LTC4296AUK-1#PBF Datasheet

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Compliance Codes

CNHTS:: 8542399000
CAHTS:: 8542310000
USHTS:: 8542310075
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Thailand
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

LTC4296-1 5-Port SPoE PSE Controller

Analog Devices Inc. LTC4296-1 5-Port SPoE PSE Controller is an IEEE 802.3cg-compliant, five port, single-pair power over Ethernet (SPoE), power sourcing equipment (PSE) controller. SPoE simplifies system design and installation with standardized power and Ethernet data over a single-pair cable. The LTC4296-1 is designed for interoperability with 802.3cg-powered devices (PDs) in 24V or 54V systems. The LTC4296-1 delivers power using external, low drain-to-source on resistance (R_DS(ON)), N-channel metal-oxide-semiconductor field-effect transistors (MOSFETs), which minimize voltage drop and ensure application ruggedness.