QPD1035 GaN RF Power Transistors

Qorvo QPD1035 GaN RF Power Transistors are 40W discrete GaN on SiC HEMTs operating from DC to 6GHz with a 50V supply. The Qorvo QPD1035 transistors feature an input pre-match, making it ideal for broadband amplifiers in pulsed and CW operations. The devices are lead-free and RoHS-compliant.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation
Qorvo GaN FETs 30W, DC - 6GHz 46In Stock
Min.: 1
Mult.: 1
Reel: 50

Flanged - 40 C + 85 C 50.4 W
Qorvo GaN FETs 30W, DC - 6GHz, Flanged
100On Order
Min.: 1
Mult.: 1
Reel: 50

Flanged - 40 C + 85 C 50.4 W