STP80N450K6

STMicroelectronics
511-STP80N450K6
STP80N450K6

Mfr.:

Description:
MOSFETs N-channel 800 V, 400 mOhm typ., 8 A MDmesh K6 Power MOSFET
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In Stock: 229

Stock:
229 Can Dispatch Immediately
Factory Lead Time:
13 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 229 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
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Pricing (DKK)

Qty. Unit Price
Ext. Price
28,35 kr. 28,35 kr.
15,29 kr. 152,90 kr.
13,80 kr. 1.380,00 kr.
11,34 kr. 5.670,00 kr.
10,44 kr. 10.440,00 kr.
10,22 kr. 25.550,00 kr.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
800 V
10 A
450 mOhms
Enhancement
Tube
Brand: STMicroelectronics
Product Type: MOSFETs
Factory Pack Quantity: 50
Subcategory: Transistors
Unit Weight: 2 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
MXHTS:
8541299900
ECCN:
EAR99

STP80N450K6 800V N-Channel Power MOSFET

STMicroelectronics STP80N450K6 800V N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. This technology is based on 20 years of STMicroelectronics experience in super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

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