OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced RDS(ON) of 30% and are optimised for synchronous rectification.

Results: 81
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Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Infineon Technologies MOSFETs IFX FET >150 - 400V
Datasheet
9.995Expected 15/10/2026
MouseReel Available
Min.: 1
Mult.: 1
Reel: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 200 V 74 A 15.1 mOhms - 20 V, 20 V 3.7 V 31 nC - 55 C + 175 C 200 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET 40V
Datasheet
8.985On Order
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT TFN-10 N-Channel 2 Channel 40 V 299 A 880 uOhms - 20 V, 20 V 2.8 V 69 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs MOSFET_(20V 40V)
Datasheet
9.920On Order
MouseReel Available
Min.: 1
Mult.: 1
Reel: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 40 V 120 A 600 uOhms - 20 V, 20 V 3 V 116 nC - 55 C + 175 C 187 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFET_(20V 40V)
Datasheet
2.000On Order
Min.: 1
Mult.: 1
Reel: 2.000

Si SMD/SMT PG-LHDSO-10-3 N-Channel 40 V 390 A 750 uOhms 20 V 3 V 100 nC - 55 C + 175 C 206 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs OptiMOS 6 n-channel power MOSFET 80 V in TO-220
Datasheet
500Expected 12/03/2026
Min.: 1
Mult.: 1

Si OptiMOS Tube
Infineon Technologies MOSFETs IFX FET >150 - 400V
Datasheet
2.000Expected 26/02/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 136 A 6.9 mOhms - 20 V, 20 V 3.7 V 73 nC - 55 C + 175 C 300 W Enhancement Tube