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NTMC083NP10M5L

Name: onsemi NTMC083NP10M5L
Brand: onsemi
SKU: 863-NTMC083NP10M5L
Price: 5.97 DKK
Availability: InStock

Mouser No:

863-NTMC083NP10M5L

Mfr. No:

NTMC083NP10M5L

Mfr.:

onsemi

Description:

MOSFETs MV5_100V_N_P_IN DUALS AND SINGLE

Datasheet:

NTMC083NP10M5L Datasheet

ECAD Model:

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In Stock: 38.459

Stock:: 38.459 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Ext. Price:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	5,97 kr.	5,97 kr.
	3,74 kr.	37,40 kr.
	3,22 kr.	322,00 kr.
	3,01 kr.	1.505,00 kr.
	2,88 kr.	2.880,00 kr.
Full Reel (Order in multiples of 2500)
	2,78 kr.	6.950,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	3.6 A, 4.5 A
Rds On - Drain-Source Resistance:	83 mOhms, 131 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V, 4 V
Qg - Gate Charge:	3 nC, 8.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.1 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTMC083NP10M5L
Factory Pack Quantity:	2500
Subcategory:	Transistors

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Datasheet

NTMC083NP10M5L Datasheet

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

NTMC083NP10M5L Dual N- & P- Channel Power MOSFET

onsemi NTMC083NP10M5L Dual N- and P- Channel Power MOSFET is designed with low gate charge (Q_G) and capacitance to minimize the driver losses. This MOSFET features low drain-to-source on-resistance (R_DS(on)) to minimize conduction losses. This device is compactly designed with a standard footprint of 5mm x 6mm and is not ESD protected. The NTMC083NP10M5L power MOSFET is ideally used in power tools, battery-operated vacuums, Unmanned Aerial Vehicle (UAV)/drones, material handling, motor drive, and home automation.