NTMC083NP10M5L

onsemi
863-NTMC083NP10M5L
NTMC083NP10M5L

Mfr.:

Description:
MOSFETs MV5_100V_N_P_IN DUALS AND SINGLE

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 39.897

Stock:
39.897 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
5,65 kr. 5,65 kr.
3,63 kr. 36,30 kr.
2,98 kr. 298,00 kr.
2,85 kr. 1.425,00 kr.
2,75 kr. 2.750,00 kr.
Full Reel (Order in multiples of 2500)
2,65 kr. 6.625,00 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
N-Channel, P-Channel
2 Channel
100 V
4.5 A, 3.6 A
83 mOhms, 131 mOhms
- 20 V, 20 V
3 V, 4 V
3 nC, 8.4 nC
- 55 C
+ 150 C
3.1 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: MOSFETs
Series: NTMC083NP10M5L
Factory Pack Quantity: 2500
Subcategory: Transistors
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

NTMC083NP10M5L Dual N- & P- Channel Power MOSFET

onsemi NTMC083NP10M5L Dual N- and P- Channel Power MOSFET is designed with low gate charge (QG) and capacitance to minimize the driver losses. This MOSFET features low drain-to-source on-resistance (RDS(on)) to minimize conduction losses. This device is compactly designed with a standard footprint of 5mm x 6mm and is not ESD protected. The NTMC083NP10M5L power MOSFET is ideally used in power tools, battery-operated vacuums, Unmanned Aerial Vehicle (UAV)/drones, material handling, motor drive, and home automation.