Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs SIC_DISCRETE 724In Stock
140,92 kr.
103,32 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 52 A 59 mOhms - 7 V, + 20 V 5.7 V 57 nC - 55 C + 175 C 228 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 299In Stock
58,71 kr.
35,66 kr.
35,06 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1.731In Stock
92,28 kr.
57,37 kr.
55,65 kr.
54,98 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 18In Stock
720On Order
53,12 kr.
37,37 kr.
30,29 kr.
23,80 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
24.949On Order
Cut Tape
38,79 kr.
25,44 kr.
19,02 kr.
15,89 kr.
Reel
13,80 kr.
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
2.160On Order
118,91 kr.
90,56 kr.
75,50 kr.
67,21 kr.
62,81 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
27,38 kr.
27,30 kr.
Min.: 240
Mult.: 240
Through Hole TO-247-4 1 Channel 650 V 28 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC