DI008N09SQ

Diotec Semiconductor
637-DI008N09SQ
DI008N09SQ

Mfr.:

Description:
MOSFETs MOSFET, SO-8, 90V, 8A, 150C, N

ECAD Model:
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In Stock: 3.970

Stock:
3.970 Can Dispatch Immediately
Quantities greater than 3970 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Pricing (DKK)

Qty. Unit Price
Ext. Price
5,71 kr. 5,71 kr.
3,74 kr. 37,40 kr.
2,43 kr. 243,00 kr.
1,96 kr. 980,00 kr.
1,76 kr. 1.760,00 kr.
1,62 kr. 3.240,00 kr.
Full Reel (Order in multiples of 4000)
1,46 kr. 5.840,00 kr.
1,24 kr. 9.920,00 kr.
1,22 kr. 29.280,00 kr.

Product Attribute Attribute Value Select Attribute
Diotec Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SO-8
DI008N09SQ
Reel
Cut Tape
Brand: Diotec Semiconductor
Product Type: MOSFETs
Series: DI0XX
Factory Pack Quantity: 4000
Subcategory: Transistors
Part # Aliases: N-CHANNEL
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Attributes selected: 0

TARIC:
8541290000
USHTS:
8541290000
ECCN:
EAR99

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

DI008N09SQ N-Channel Power MOSFET

Diotec Semiconductor DI008N09SQ N-Channel Power MOSFET is a 90V drain-source voltage (VDSS) N-channel power MOSFET in a tiny, space-saving SO-8 package. It comes with an 8A continuous drain current (ID) and 2W power dissipation (Ptot). The device offers a low drain-source on-state resistance of 75mΩ typical (VGS=4.5V ID=3A). The Diotec Semiconductor DI008N09SQ is ideal for power management units, battery-powered devices, load switches, polarity protection, and DC/DC converter applications.