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RF6L025BGTCR

Name: ROHM Semiconductor RF6L025BGTCR
Brand: ROHM Semiconductor
SKU: 755-RF6L025BGTCR
Price: 4.36 DKK
Availability: InStock

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Mouser No:

755-RF6L025BGTCR

Mfr. No:

RF6L025BGTCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs SOT363 N-CH 60V 2.5A

Datasheet:

RF6L025BGTCR Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RF6L025BGTCR

In Stock: 2.956

Stock:: 2.956 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	4,36 kr.	4,36 kr.
	2,69 kr.	26,90 kr.
	1,72 kr.	172,00 kr.
	1,31 kr.	655,00 kr.
	1,17 kr.	1.170,00 kr.
Full Reel (Order in multiples of 3000)
	0,97 kr.	2.910,00 kr.
	0,895 kr.	5.370,00 kr.
	0,798 kr.	7.182,00 kr.
	0,776 kr.	18.624,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-363T-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	2.5 A
Rds On - Drain-Source Resistance:	91 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	3.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	3.1 ns
Forward Transconductance - Min:	1.3 S
Product Type:	MOSFETs
Rise Time:	4.8 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	5.3 ns

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Datasheet

RF6L025BGTCR Datasheet

Specification Sheets

Datasheet - Chinese (English language)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

RF6L025BG Power MOSFET

ROHM Semiconductor RF6L025BG Power MOSFET features 60V drain-source voltage (V_DSS) and ±2.5A continuous drain current (I_D). This N-channel MOSFET offers 91mΩ low on-resistance (R_DS(on)) and power dissipation of 1W (P_D). The RF6L025BG MOSFET operates within the -55°C to 150°C operating junction and storage temperature range and is available in a Halogen-free, small surface mount package (TUMT6 or SOT-363T). This RoHS-compliant device incorporates Pb-free plating. The RF6L025BG power MOSFET is suitable for switching, motor drives, and DC/DC converter applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.