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DMTH8001STLWQ-13

Name: Diodes Incorporated DMTH8001STLWQ-13
Brand: Diodes Incorporated
SKU: 621-DMTH8001STLWQ-13
Price: 37.9 DKK
Availability: InStock

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See Product Specifications

Mouser No:

621-DMTH8001STLWQ-13

Mfr. No:

DMTH8001STLWQ-13

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET BVDSS: 61V~100V PowerDI1012-8 T&R 1.5K

Datasheet:

DMTH8001STLWQ-13 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated DMTH8001STLWQ-13

In Stock: 1.560

Stock:: 1.560 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	37,90 kr.	37,90 kr.
	27,01 kr.	270,10 kr.
	19,47 kr.	1.947,00 kr.
	18,20 kr.	18.200,00 kr.
Full Reel (Order in multiples of 1500)
	18,20 kr.	27.300,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	270 A
Rds On - Drain-Source Resistance:	1.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	138 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	6 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Product Type:	MOSFETs
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

DMTH8001STLWQ-13 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

DMTH8001STLWQ Automotive Enhancement-Mode MOSFET

Diodes Incorporated DMTH8001STLW Automotive Enhancement-Mode MOSFET is an N-channel MOSFET featuring a low on-resistance (1.1mΩ typical, 1.7mΩ maximum_⁾ and superior switching performance. The DMTH8001STLW has an 80V drain-source voltage, a 1µA zero gate voltage drain current, and ±100nA gate-source leakage. This device is AEC-Q101 qualified, supported by a PPAP, and optimized for automotive applications.