CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage VGS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

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Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
Datasheet
198In Stock
Min.: 1
Mult.: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 23 mOhms - 10 V, + 25 V 5.1 V 73 nC - 40 C + 175 C 356 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
Datasheet
235In Stock
Min.: 1
Mult.: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 171 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
Datasheet
225In Stock
Min.: 1
Mult.: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 250 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datasheet
134In Stock
Min.: 1
Mult.: 1
Max.: 10

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 16 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 480 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datasheet
147In Stock
Min.: 1
Mult.: 1
Max.: 30

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 97 A 23 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datasheet
185In Stock
Min.: 1
Mult.: 1
Max.: 120

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 69 A 34 mOhms - 10 V, + 25 V 5.1 V 60 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
Datasheet
302In Stock
480Expected 18/06/2026
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U07 N-Channel 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datasheet
111In Stock
240Expected 11/06/2026
Min.: 1
Mult.: 1
Max.: 20

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 80 A 29 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datasheet
138In Stock
Min.: 1
Mult.: 1
Max.: 20

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 55 A 45 mOhms - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datasheet
137In Stock
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 48 A 51 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datasheet
621In Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2
Datasheet
1.705In Stock
Min.: 1
Mult.: 1
Max.: 50

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datasheet
1.855In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 82 A 67 mOhms - 10 V, + 25 V 5.1 V 63.4 nC - 55 C + 175 C 405 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datasheet
574In Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 64 A 89 mOhms - 10 V, + 25 C 5.1 V 48.7 nC - 55 C + 175 C 326 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datasheet
270In Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 56 A 104 mOhms - 10 V, + 25 V 5.1 V 42.4 nC - 55 C + 175 C 288 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datasheet
377In Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 43 A 138 mOhms - 10 V, + 25 V 5.1 V 32.8 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datasheet
919In Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 31 A 205 mOhms - 10 V, + 25 V 5.1 V 23.2 nC - 55 C + 175 C 176 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datasheet
712In Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datasheet
670In Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datasheet
331In Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2
Datasheet
296In Stock
480Expected 18/06/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2
Datasheet
654In Stock
Min.: 1
Mult.: 1
Max.: 20

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2
Datasheet
553In Stock
Min.: 1
Mult.: 1
Max.: 20

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 25 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2
Datasheet
827In Stock
240Expected 11/06/2026
Min.: 1
Mult.: 1
Max.: 70

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2
Datasheet
804In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC