ADPA7007 GaAs pHEMT MMIC Power Amplifiers

Analog Devices ADPA7007 GaAs pHEMT MMIC Power Amplifiers are pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18GHz to 44GHz. The amplifier provides a gain of 21.5dB, an output power for 1dB compression (P1dB) of 31dBm, and a typical output third-order intercept (IP3) of 41dBm. The ADPA7007 requires 1400mA from a 5V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50Ω, facilitating integration in multichip modules (MCMs). All data is taken with the chip connected via two 0.025mm wire bonds less than 0.31mm long.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Operating Frequency Operating Supply Voltage Operating Supply Current Gain NF - Noise Figure Type Mounting Style Package/Case Technology P1dB - Compression Point OIP3 - Third Order Intercept Minimum Operating Temperature Maximum Operating Temperature Packaging
Analog Devices RF Amplifier 31 dBm P1dB, 20 dB gain
404On Order
Min.: 1
Mult.: 1

20 GHz to 44 GHz 5 V 1.4 A 20.5 dB 6 dB Power Amplifiers SMD/SMT CLCC-HS-18 GaAs 29 dBm 42.5 dBm - 40 C + 85 C Cut Tape
Analog Devices RF Amplifier 31 dBm P1dB, 20 dB gain
Non-Stocked Lead-Time 39 Weeks
Min.: 500
Mult.: 500
Reel: 500

20 GHz to 44 GHz 5 V 1.4 A 20.5 dB 6 dB SMD/SMT CLCC-HS-18 GaAs 29 dBm 41 dBm - 40 C + 85 C Reel