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SIRS5700DP-T1-RE3

Name: Vishay SIRS5700DP-T1-RE3
Brand: Vishay
SKU: 78-SIRS5700DP-T1-RE3
Price: 30.21 DKK
Availability: InStock

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Mouser No:

78-SIRS5700DP-T1-RE3

Mfr. No:

SIRS5700DP-T1-RE3

Mfr.:

Vishay

Description:

MOSFETs N-CH 150V Vds 20Vgs 144A Rds .0062

Datasheet:

SIRS5700DP-T1-RE3 Datasheet

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In Stock: 2.588

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	30,21 kr.	30,21 kr.
	19,99 kr.	199,90 kr.
	15,29 kr.	1.529,00 kr.
	13,28 kr.	6.640,00 kr.
	12,91 kr.	12.910,00 kr.
Full Reel (Order in multiples of 3000)
	11,26 kr.	33.780,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	144 A
Rds On - Drain-Source Resistance:	5.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	73 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	278 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay
Configuration:	Single
Fall Time:	25 ns
Forward Transconductance - Min:	122 S
Product Type:	MOSFETs
Rise Time:	21 ns
Series:	SiRS5700DP
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	20 ns

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Datasheet

SIRS5700DP-T1-RE3 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

SiRS5700DP N-Channel 150V (D-S) MOSFET

Vishay SiRS5700DP N-Channel 150V (D-S) MOSFET is a TrenchFET® Gen V power MOSFET with a very low R_DS x Q_g figure-of-merit (FOM). The Vishay SiRS5700DP optimizes power efficiency, and the device's R_DS(on) minimizes power loss during conduction, ensuring efficient operation. This MOSFET undergoes 100% R_g and UIS testing, guaranteeing reliability. The device also enhances power dissipation and lowers thermal resistance (R_thJC), making it an ideal choice for high-performance applications.