1,700 V N-Channel Silicon Carbide (SiC) MOSFETs

Central Semiconductor 1700V N-Channel Silicon Carbide (SiC) MOSFETs are designed for high-speed switching and fast reverse recovery applications. These MOSFETs feature a gate-source voltage (VGS) rating of 20V and a continuous drain current (ID) of 37A (CDMS24720-170) or 26A (CDMS24740-170). Both devices have a 28W power dissipation (PD) rating and are packaged in a TO-247 with an operating temperature range of -55°C to 175°C. These Central Semiconductor 1700V SiC MOSFETs support higher breakdown voltage and better thermal conductivity.

Results: 2
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Central Semiconductor SiC MOSFETs 1700V Through-Hole MOSFET N-Channel SiC
Datasheet
30In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 26 A 40 mOhms 20 V 2.4 V - 55 C + 175 C 28 W Depletion
Central Semiconductor SiC MOSFETs 1700V Through-Hole MOSFET N-Channel SiC
Datasheet
30In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 37 A 20 V 2.6 V - 55 C + 175 C 28 W Depletion