DMTH10H1M7STLWQ-13

Diodes Incorporated
621-MTH10H1M7STLWQ13
DMTH10H1M7STLWQ-13

Mfr.:

Description:
MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K

ECAD Model:
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In Stock: 476

Stock:
476 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
38,94 kr. 38,94 kr.
27,08 kr. 270,80 kr.
19,55 kr. 1.955,00 kr.
19,47 kr. 9.735,00 kr.
18,20 kr. 18.200,00 kr.
Full Reel (Order in multiples of 1500)
18,20 kr. 27.300,00 kr.

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: MOSFETs
REACH - SVHC:
Si
SMD/SMT
N-Channel
1 Channel
100 V
250 A
2 mOhms
- 20 V, 20 V
4 V
147 nC
- 55 C
+ 175 C
6 W
Enhancement
Reel
Cut Tape
Brand: Diodes Incorporated
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: MOSFETs
Factory Pack Quantity: 1500
Subcategory: Transistors
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Attributes selected: 0

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TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

DMTH10H1M7STLWQ Automotive Enhancement-Mode MOSFET

Diodes Incorporated DMTH10H1M7STLWQ Automotive Enhancement-Mode MOSFET is an N-channel MOSFET featuring a low on-resistance (1.4mΩ typical, 2.0mΩ maximum) and superior switching performance. The DMTH10H1M7STLWQ has a 100V drain-source voltage, a 1µA zero gate voltage drain current, and ±100nA gate-source leakage. This device is AEC-Q101 qualified, supported by a PPAP, and optimized for automotive applications.