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STGWA75H65DFB2

Name: STMicroelectronics STGWA75H65DFB2
Brand: STMicroelectronics
SKU: 511-STGWA75H65DFB2
Price: 35.14 DKK
Availability: OutOfStock

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Mouser No:

511-STGWA75H65DFB2

Mfr. No:

STGWA75H65DFB2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long

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Datasheet:

STGWA75H65DFB2 Datasheet (PDF)

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Availability

Stock:: 0

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On Order:: 600

Expected 04/12/2026
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	35,14 kr.	35,14 kr.
	19,69 kr.	196,90 kr.
	16,26 kr.	1.626,00 kr.
	14,17 kr.	8.502,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	115 A
Pd - Power Dissipation:	375 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6,100 g

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Datasheet

STGWA75H65DFB2 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STGWA75H65DFB2 HB2 IGBT

STMicroelectronics STGWA75H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium V_CE(sat) at low current values and reduced switching energy. The STGWA75H65DFB2 HB2 IGBT features a low V_CE(sat) of 1.55V (typical) at an I_C of 75A.

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.