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NVMYS9D3N06CLTWG

Name: onsemi NVMYS9D3N06CLTWG
Brand: onsemi
SKU: 863-NVMYS9D3N06CLTWG
Price: 10.15 DKK
Availability: Discontinued

Images are for reference only
See Product Specifications

Mouser No:

863-NVMYS9D3N06CLTWG

Mfr. No:

NVMYS9D3N06CLTWG

Mfr.:

onsemi

Description:

MOSFETs T6 60V LL LFPAK

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

NVMYS9D3N06CLTWG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMYS9D3N06CLTWG

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 2.585

Expected 05/06/2026
Factory Lead Time:: 47

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	10,15 kr.	10,15 kr.
	6,42 kr.	64,20 kr.
	4,27 kr.	427,00 kr.
	3,37 kr.	1.685,00 kr.
	3,07 kr.	3.070,00 kr.
Full Reel (Order in multiples of 3000)
	2,69 kr.	8.070,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	50 A
Rds On - Drain-Source Resistance:	9.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	9.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	46 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	2 ns
Forward Transconductance - Min:	37 S
Product Type:	MOSFETs
Rise Time:	25 ns
Series:	NVMYS9D3N06CL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	6 ns

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Datasheet

NVMYS9D3N06CLTWG Datasheet

PCN

Product Change Notification 2024-06-12 (PDF)

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NVMYS9D3N06CL Power MOSFET

onsemi NVMYS9D3N06CL Power MOSFET is a 60V, 9.2mΩ, and 50A single N-channel MOSFET built with a compact and efficient design for high thermal performance. This MOSFET features low R_DS(ON) to minimize conduction losses and low gate charge (Q_G) and capacitance to minimize driver losses. The NVMYS9D3N06CL power MOSFET is AEC-Q101-qualified and is PPAP-capable. This MOSFET is suitable for reverse battery protection, power switches, switching power supplies, and other automotive applications requiring enhanced board-level reliability.

PowerTrench® MOSFETs

onsemi PowerTrench^® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low R_DS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.