PSC20120x Silicon Carbide (SiC) Schottky Diodes

Nexperia PSC20120x Silicon Carbide (SiC) Schottky Diodes are designed for ultra-high performance, low-loss, high-efficiency power conversion applications. The devices feature temperature-independent capacitive turn-off, zero recovery switching behavior, and an excellent figure-of-merit (QC x VF).

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 Mfr.
Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Nexperia SiC Schottky Diodes PSC20120J/SOT8018/TO263-2L
Datasheet
800Expected 14/05/2026
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-2 Single 20 A 1.2 kV 1.5 V 710 A 1 uA - 55 C + 175 C Reel, Cut Tape
Nexperia SiC Schottky Diodes PSC20120L/SOT8022/TO247-2L
Datasheet
450Expected 18/11/2026
Min.: 1
Mult.: 1

Through Hole TO-247-2 Single 20 A 1.2 kV 1.5 V 710 A 1 uA - 55 C + 175 C