DMTH10H2M5STLWQ-13

Diodes Incorporated
621-TH10H2M5STLWQ-13
DMTH10H2M5STLWQ-13

Mfr.:

Description:
MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K

ECAD Model:
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In Stock: 1.457

Stock:
1.457 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1457 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
34,39 kr. 34,39 kr.
23,57 kr. 235,70 kr.
17,01 kr. 8.505,00 kr.
Full Reel (Order in multiples of 1500)
16,56 kr. 24.840,00 kr.
16,49 kr. 49.470,00 kr.
9.000 Quote
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
Reel
Cut Tape
MouseReel
Brand: Diodes Incorporated
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: MOSFETs
Factory Pack Quantity: 1500
Subcategory: Transistors
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Attributes selected: 0

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

DMTH10H2M5STLWQ Automotive Enhancement-Mode MOSFET

Diodes Incorporated DMTH10H2M5STLWQ Automotive Enhancement-Mode MOSFET is an N-channel MOSFET featuring a low on-resistance (1.68mΩ typical, 2.5mΩ maximum) and superior switching performance. The DMTH10H2M5STLWQ has a 100V drain-source voltage, a 1µA zero gate voltage drain current, and ±100nA gate-source leakage. This device is AEC-Q101 qualified, supported by a PPAP, and optimized for automotive applications.