TRENCHSTOP™ 5 IGBTs

Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

Results: 39
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Package/Case Mounting Style Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum Gate Emitter Voltage Continuous Collector Current at 25 C Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Packaging

Infineon Technologies IGBTs IGBT PRODUCTS 244In Stock
960Expected 05/03/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 74 A 255 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs IGBT PRODUCTS 80In Stock
7.960On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 74 A 250 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs INDUSTRY 314In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 275 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs IGBT PRODUCTS 5In Stock
2.880Expected 09/04/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 305 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs IGBT PRODUCTS 568In Stock
960Expected 26/02/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 305 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs INDUSTRY 340In Stock
720Expected 26/02/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 90 A 395 W - 40 C + 175 C Trenchstop IGBT5 Tube
Infineon Technologies IGBTs IGBT PRODUCTS 288In Stock
Min.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 74 A 250 W - 40 C + 175 C Trenchstop IGBT5 Tube
Infineon Technologies IGBTs IGBT PRODUCTS 697In Stock
Min.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 74 A 250 W - 40 C + 175 C Trenchstop IGBT5 Tube
Infineon Technologies IGBTs 650V IGBT Trenchstop 5
2.102On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.05 V - 20 V, 20 V 85 A 227 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs INDUSTRY
760On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 395 W - 40 C + 175 C Trenchstop IGBT5 Tube
Infineon Technologies IGBTs HOME APPLIANCES Non-Stocked Lead-Time 19 Weeks
Min.: 1
Mult.: 1

- 20 V, 20 V Trenchstop IGBT5 Tube
Infineon Technologies IGBTs INDUSTRY Non-Stocked Lead-Time 19 Weeks
Min.: 1
Mult.: 1

Si Through Hole Single 650 V 1.35 V - 20 V, 20 V 80 A 274 W - 40 C + 175 C Trenchstop IGBT5 S5 Tube
Infineon Technologies IGBTs INDUSTRY Non-Stocked Lead-Time 19 Weeks
Min.: 240
Mult.: 240

- 20 V, 20 V Trenchstop IGBT5 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode Non-Stocked Lead-Time 26 Weeks
Min.: 240
Mult.: 240

Si TO-247-4 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 395 W - 40 C + 175 C Trenchstop IGBT5 Tube