UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

Results: 23
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 Mfr.
Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
onsemi SiC MOSFETs 1700V/400MOSICFETG3TO263-7
Datasheet
685In Stock
800Expected 21/12/2026
Cut Tape
74,67 kr.
52,82 kr.
39,17 kr.
37,08 kr.
Reel
37,08 kr.
MouseReel Available
Min.: 1
Mult.: 1
Max.: 800
: 800
SMD/SMT D2PAK-7 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi SiC MOSFETs 650V/40MOSICFETG3TO247-4
Datasheet
3.278In Stock
127,04 kr.
76,02 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/40MOSICFETG3TO247-3
Datasheet
214In Stock
188,51 kr.
140,70 kr.
140,17 kr.
125,70 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO247
Datasheet
626In Stock
79,00 kr.
45,21 kr.
41,93 kr.
40,13 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/80MOSICFETG3TO26
Datasheet
618In Stock
Cut Tape
123,39 kr.
77,36 kr.
73,26 kr.
Reel
73,26 kr.
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO220-3
Datasheet
902In Stock
164,64 kr.
105,86 kr.
Min.: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/40MOSICFETG3TO247
Datasheet
1.166In Stock
97,88 kr.
74,23 kr.
70,05 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/40MOSICFETG3TO24
Datasheet
610In Stock
189,33 kr.
125,70 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO247-4
Datasheet
583In Stock
82,73 kr.
46,48 kr.
43,12 kr.
41,48 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/80MOSICFETG3TO24
Datasheet
1.142In Stock
135,77 kr.
82,81 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO220
Datasheet
475In Stock
76,91 kr.
44,31 kr.
41,03 kr.
38,20 kr.
Min.: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/150MOSICFETG3TO2
Datasheet
355In Stock
Cut Tape
81,91 kr.
47,00 kr.
43,34 kr.
41,03 kr.
Reel
41,03 kr.
MouseReel Available
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO263-3
Datasheet
1.252In Stock
Cut Tape
75,57 kr.
43,57 kr.
39,61 kr.
37,45 kr.
Reel
37,45 kr.
MouseReel Available
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO263-7
Datasheet
199In Stock
Cut Tape
86,46 kr.
50,21 kr.
46,85 kr.
44,31 kr.
Reel
44,31 kr.
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 27 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 136.4 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/400MOSICFETG3TO263-7
Datasheet
718In Stock
800Expected 08/01/2027
Cut Tape
59,38 kr.
32,53 kr.
29,91 kr.
28,20 kr.
Reel
28,20 kr.
MouseReel Available
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 5.9 A 410 mOhms - 25 V, + 25 V 6 V 22.5 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/80MOSICFETG3TO247-4
Datasheet
617In Stock
135,85 kr.
82,88 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1700V/400MOSICFETG3TO2
Datasheet
266In Stock
600Expected 18/12/2026
75,94 kr.
42,82 kr.
39,61 kr.
37,60 kr.
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 1.7 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/150MOSICFETG3TO247-4
Datasheet
63In Stock
89,59 kr.
50,06 kr.
48,42 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 18.4 A 330 mOhms - 25 V, + 25 V 3.5 V 25.7 nC - 55 C + 175 C 166.7 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO247
Datasheet
62In Stock
173,30 kr.
106,53 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO247-4
Datasheet
1.200Expected 04/11/2026
173,74 kr.
139,05 kr.
120,33 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/40MOSICFETG3TO220-3
Datasheet
1.000Expected 26/10/2026
130,85 kr.
78,40 kr.
74,82 kr.
Min.: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/400MOSICFETG3TO247-3
Datasheet
300Expected 15/01/2027
74,45 kr.
50,80 kr.
42,37 kr.
37,75 kr.
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO263-3
Datasheet
Non-Stocked Lead-Time 52 Weeks
Cut Tape
162,11 kr.
109,66 kr.
Reel
109,66 kr.
MouseReel Available
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 65 A 27 mOhms - 25 V, + 25 V 4 V 51 nC - 25 C + 175 C 242 W Enhancement AEC-Q101 SiC FET