U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Results: 86
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
Toshiba MOSFETs N-Ch U-MOSVI FET ID 4A 30VDSS 200pF
49.788On Order
Min.: 1
Mult.: 1
: 3.000

Si N-Channel 1 Channel U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-Ch U-MOS VI FET ID -12A -12V 1200pF
26.938Expected 28/08/2026
Min.: 1
Mult.: 1
: 3.000

Si P-Channel 1 Channel U-MOSVI Reel, Cut Tape, MouseReel

Toshiba MOSFETs P-Ch -30V FET 2580pF -10A 1.9W 4.926In Stock
Min.: 1
Mult.: 1
: 2.500

Si SMD/SMT SOP-8 P-Channel 1 Channel 30 V 10 A 17 mOhms - 25 V, 20 V 2 V 64 nC - 55 C + 150 C 1.9 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TSON-ADV MOQ=5000 PD=30W F=1MHZ
9.986Expected 16/11/2026
Min.: 1
Mult.: 1
: 5.000

Si SMD/SMT TSON-8 P-Channel 1 Channel 30 V 23 A 7.8 mOhms - 25 V, 20 V 800 mV 76 nC - 55 C + 150 C 30 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-Channel Mosfet 20V UMOS-VI
30.000Expected 16/11/2026
Min.: 1
Mult.: 1
: 5.000

Si SMD/SMT TSON-8 P-Channel 1 Channel 20 V 36 A 4.7 mOhms - 12 V, 12 V 500 mV 65 nC - 55 C + 150 C 42 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small Signal MOSFET P-ch VDSS=-20V, VGSS=+6/-8V, ID=-6.0A, RDS(ON)=0.0225Ohm @ 4.5V, in UF6 package
3.211Expected 28/08/2026
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT UF-6 P-Channel 1 Channel 20 V 6 A 22.5 mOhms - 8 V, 6 V 1 V 23.1 nC - 55 C + 150 C 1 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-Ch MOS -8A -60V 27W 890pF 0.104
2.000Expected 16/11/2026
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 8 A 104 mOhms - 20 V, 10 V 2 V 19 nC - 55 C + 175 C 27 W Enhancement AEC-Q100 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs X34 Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-3.2A Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT UFM-3 P-Channel 1 Channel 20 V 3.2 A 93 mOhms - 8 V, 6 V 1 V 4.7 nC + 150 C 1 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 8V GS Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT UDFN-6 P-Channel 2 Channel 20 V 4 A 242 mOhms - 8 V, 8 V 1 W U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-Ch MOS -80A -40V 100W 7770pF 0.0052 Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 80 A 5.2 mOhms 100 W AEC-Q100 U-MOSVI Reel

Toshiba MOSFETs N-Ch -40V FET 1650pF -5A 1.9W 20nC Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1
: 2.500

Si SMD/SMT SOP-8 P-Channel 1 Channel 40 V 5 A 66 mOhms - 25 V, 20 V 2 V 20 nC - 55 C + 150 C 1.9 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel