MMIX1T500N20X4-TU

IXYS
747-MMIX1T500N20X4TU
MMIX1T500N20X4-TU

Mfr.:

Description:
MOSFETs 200V < 2mohm X4 n-channel MOSFET in SMPD -X

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
100
Expected 11/03/2026
Factory Lead Time:
25
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
306,90 kr. 306,90 kr.
266,62 kr. 2.666,20 kr.
233,20 kr. 23.320,00 kr.

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
SiC
SMD/SMT
SMPD-24
N-Channel
1 Channel
200 V
480 A
1.99 mOhms
- 20 V, 20 V
4.5 V
535 nC
- 55 C
+ 175 C
1.07 kW
Enhancement
Tube
Brand: IXYS
Configuration: Single
Fall Time: 485 ns
Forward Transconductance - Min: 150 S
Moisture Sensitive: Yes
Product Type: MOSFETs
Rise Time: 560 ns
Factory Pack Quantity: 20
Subcategory: Transistors
Transistor Type: 1 N Channel
Typical Turn-Off Delay Time: 600 ns
Typical Turn-On Delay Time: 200 ns
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

MMIX1T500N20X4 200 V X4-Class Power MOSFET

IXYS MMIX1T500N20X4 200V X4-Class Power MOSFET is an N-channel enhancement mode MOSFET with an up to 200V blocking voltage and a low RDS(on) of 1.99mΩ. It offers low conduction losses and has reduced heat dissipation. The high-performance ceramic-based isolated package improves overall thermal resistance Rth(j-s) and power handling capability. The IXYS MMIX1T500N20X4 has an isolation voltage of 2500VAC (RMS) for 1 minute and a low gate charge (Qg) of 535nC.