It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

STWA60N043DM9

Name: STMicroelectronics STWA60N043DM9
Brand: STMicroelectronics
SKU: 511-STWA60N043DM9
Price: 69.9 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STWA60N043DM9

Mfr. No:

STWA60N043DM9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET

Complete Your Design

Datasheet:

STWA60N043DM9 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STWA60N043DM9

In Stock: 82

Stock:: 82 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	69,90 kr.	69,90 kr.
	50,28 kr.	502,80 kr.
	44,61 kr.	5.353,20 kr.
	43,49 kr.	22.179,90 kr.
	40,36 kr.	41.167,20 kr.
2.520	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	56 A
Rds On - Drain-Source Resistance:	43 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	78.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	312 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	MOSFETs
Series:	MDmesh DM9
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N Channel
Unit Weight:	6,100 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STWA60N043DM9 Datasheet (PDF)

PCN

Product Change Notification 2025-7-29 (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

STP60N043DM9 MDmesh DM9 Power MOSFET

STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low R_DS(on) per area coupled with a fast-recovery diode. The device implements innovative super-junction MDmesh DM9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.