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STP50N60DM6

Name: STMicroelectronics STP50N60DM6
Brand: STMicroelectronics
SKU: 511-STP50N60DM6
Price: 39.69 DKK
Availability: InStock

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Mouser No:

511-STP50N60DM6

Mfr. No:

STP50N60DM6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in a TO-220 package

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Datasheet:

STP50N60DM6 Datasheet (PDF)

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In Stock: 199

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	39,69 kr.	39,69 kr.
	22,60 kr.	226,00 kr.
	20,74 kr.	2.074,00 kr.
	19,10 kr.	9.550,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	55 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Factory Pack Quantity:	1000
Subcategory:	Transistors
Unit Weight:	2 g

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Datasheet

STP50N60DM6 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

STP50N60DM6 MDmesh™ DM6 Power MOSFET

STMicroelectronics STP50N60DM6 MDmesh™ DM6 Power MOSFET is a high-voltage N-channel power MOSFET with extremely high dv/dt ruggedness. This power MOSFET is a fast-recovery body diode that is Zener-protected and 100% avalanche-tested. The STMicroelectronics STP50N60DM6 power MOSFET offers low gate charge, low input capacitance, low resistance, and lower R_DS(on) per area compared to the previous generation. This MOSFET combines very low recovery charge (Q_rr), recovery time (t_rr), and excellent improvement in R_DS(on) per area with one of the most effective switching behavior. The STP50N60DM6 MDmesh DM6 power MOSFET is ideal for switching applications.