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STGB5H60DF

Name: STMicroelectronics STGB5H60DF
Brand: STMicroelectronics
SKU: 511-STGB5H60DF
Price: 3.22 DKK
Availability: Discontinued

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Mouser No:

511-STGB5H60DF

Mfr. No:

STGB5H60DF

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Complete Your Design

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

STGB5H60DF Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGB5H60DF

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 15 Weeks Estimated factory production time.

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Minimum: 2000 Multiples: 1000

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1000)
	3,22 kr.	6.440,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	D2PAK-3
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.5 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	10 A
Pd - Power Dissipation:	88 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGB5H60DF
Packaging:	Reel
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	10 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	+/- 250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	1,380 g

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Datasheet

STGB5H60DF Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.