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NVH4L025N065SC1

Name: onsemi NVH4L025N065SC1
Brand: onsemi
SKU: 863-NVH4L025N065SC1
Price: 155.32 DKK
Availability: InStock

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Mouser No:

863-NVH4L025N065SC1

Mfr. No:

NVH4L025N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 650V

Datasheet:

NVH4L025N065SC1 Datasheet

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In Stock: 428

Stock:: 428 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	155,32 kr.	155,32 kr.
	127,72 kr.	1.277,20 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	99 A
Rds On - Drain-Source Resistance:	28.5 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	164 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	348 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	8 ns
Forward Transconductance - Min:	27 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	19 ns
Series:	NVH4L025N065SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	17 ns

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Datasheet

NVH4L025N065SC1 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).