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XPW4R10ANB,L1XHQ

Name: Toshiba XPW4R10ANB,L1XHQ
Brand: Toshiba
SKU: 757-XPW4R10ANBL1XHQ
Price: 19.55 DKK
Availability: OutOfStock

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See Product Specifications

Mouser No:

757-XPW4R10ANBL1XHQ

Mfr. No:

XPW4R10ANB,L1XHQ

Mfr.:

Toshiba

Description:

MOSFETs POWER MOSFET TRANSISTOR DSOP Advance(WF)M PD=170W F=1MHZ

Datasheet:

XPW4R10ANB,L1XHQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba XPW4R10ANB,L1XHQ

Availability

Stock:: 0

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On Order:: 5.000

Expected 17/08/2026
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	19,55 kr.	19,55 kr.
	12,68 kr.	126,80 kr.
	8,80 kr.	880,00 kr.
	7,38 kr.	3.690,00 kr.
	7,12 kr.	17.800,00 kr.
Full Reel (Order in multiples of 5000)
	6,93 kr.	34.650,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DSOP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	4.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	75 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	170 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	22 ns
Product Type:	MOSFETs
Rise Time:	21 ns
Series:	U-MOSVIII-H
Factory Pack Quantity:	5000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	89 ns
Typical Turn-On Delay Time:	52 ns
Unit Weight:	104 mg

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Datasheet

XPW4R10ANB,L1XHQ Datasheet (PDF)

Application Notes

Models

Product Catalogs

Selection Guide 2024 - MOSFETs

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Automotive U-MOSVIII-H Power MOSFETs

Toshiba Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. These devices feature low on-resistance with proprietary technology using a Cu connector. The Toshiba U-MOSVIII-H Power MOSFETs have a narrowed gate threshold voltage range of 2.5V to 3.5V, which reduces switching time tolerance.