XPHR7904PS,L1XHQ

Toshiba
757-XPHR7904PSL1XHQ
XPHR7904PS,L1XHQ

Mfr.:

Description:
MOSFETs 40V UMOS9-H SOP Advance(WF) 0.79mohm

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 4.700

Stock:
4.700 Can Dispatch Immediately
Factory Lead Time:
77 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
17,23 kr. 17,23 kr.
11,19 kr. 111,90 kr.
7,68 kr. 768,00 kr.
6,18 kr. 3.090,00 kr.
6,04 kr. 6.040,00 kr.
5,96 kr. 14.900,00 kr.
Full Reel (Order in multiples of 5000)
5,77 kr. 28.850,00 kr.

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOP-8
N-Channel
40 V
150 A
1.3 mOhms
- 20 V, 20 V
3 V
85 nC
+ 175 C
170 W
Enhancement
Reel
Cut Tape
Brand: Toshiba
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: JP
Fall Time: 35 ns
Product Type: MOSFETs
Rise Time: 10 ns
Factory Pack Quantity: 5000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 15 ns
Typical Turn-On Delay Time: 23 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

UMOS9-H Silicon N-channel MOSFETs

Toshiba UMOS9-H Silicon N-channel MOSFETs are ideal for high-efficiency DC-to-DC converters, switching voltage regulators, and motor drivers. These MOSFETs boast a small gate charge, a small output charge, low drain-source on-resistance, and low leakage current. The UMOS9-H N-channel MOSFETs feature 80V drain-source voltage, ±20V gate-source voltage, and 175°C channel temperature. These MOSFETs also feature ±0.1µA gate leakage current, 10µA drain cut-off current, and a -55°C to 175°C storage temperature range. The UMOS9-H N-channel MOSFETs are RoHS-compliant and come in a 0.108g 2-5W1A (SOP Advance (N)) package.