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UF3SC120040B7S

Name: onsemi UF3SC120040B7S
Brand: onsemi
SKU: 431-UF3SC120040B7S
Price: 204.85 DKK
Availability: InStock

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Mouser No:

431-UF3SC120040B7S

Mfr. No:

UF3SC120040B7S

Mfr.:

onsemi

Description:

SiC MOSFETs 1200V/40MOSICFETG3TO263-7

Datasheet:

UF3SC120040B7S Datasheet

ECAD Model:

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In Stock: 270

Stock:: 270 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 270 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	204,85 kr.	204,85 kr.
	160,39 kr.	1.603,90 kr.
	160,32 kr.	16.032,00 kr.
	159,42 kr.	79.710,00 kr.
Full Reel (Order in multiples of 800)
	149,80 kr.	119.840,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	47 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Qg - Gate Charge:	43 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	214 W
Channel Mode:	Enhancement
Tradename:	SiC FET
Brand:	onsemi
Configuration:	Single
Fall Time:	7 ns, 8 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC FETs
Product Type:	SiC MOSFETS
Rise Time:	12 ns, 13 ns
Series:	UF3SC
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Type:	SiC FET
Typical Turn-Off Delay Time:	47 ns
Typical Turn-On Delay Time:	37 ns
Unit Weight:	4,675 g

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Datasheet

UF3SC120040B7S Datasheet

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

UF3SC High-Performance SiC FETs in D2-PAK

onsemi UF3SC High-Performance SiC FETs in D2-PAK-7L (7-lead Kelvin package) are based on a unique 'cascode' circuit configuration and feature excellent reverse recovery. This circuit configuration includes a normally-on SiC JFET to be co-packaged with Si MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These high-performance SiC FETs operate at 175°C maximum temperature, 43nC low gate charge, and 5V typical threshold voltage. Typical applications include telecom and server power, motor drives, induction heating, and industrial power supplies.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UF3SC 650V and 1200V High-Performance SiC FETs

onsemi UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low R_DS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. onsemi UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for electric-vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction (PFC) modules, and induction heating. The onsemi UF3SC SiC FETs are available in TO-247-3L and TO-247-4L package options for faster switching and clean gate waveforms.