UF3SC065007K4S

onsemi
431-UF3SC065007K4S
UF3SC065007K4S

Mfr.:

Description:
SiC MOSFETs 650V/7MOSICFETG3TO247-4

Datasheet:
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In Stock: 255

Stock:
255 Can Dispatch Immediately
Factory Lead Time:
31 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 255 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
469,38 kr. 469,38 kr.
364,12 kr. 3.641,20 kr.
355,39 kr. 42.646,80 kr.
1.020 Quote

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
120 A
9 mOhms
- 12 V, + 12 V
6 V
214 nC
- 55 C
+ 175 C
789 W
Enhancement
AEC-Q101
SiC FET
Brand: onsemi
Configuration: Single
Fall Time: 14 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 46 ns
Series: UF3SC
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 72 ns
Typical Turn-On Delay Time: 36 ns
Unit Weight: 6 g
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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UF3SC 650V and 1200V High-Performance SiC FETs

onsemi UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low RDS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. onsemi UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for electric-vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction (PFC) modules, and induction heating. The onsemi UF3SC SiC FETs are available in TO-247-3L and TO-247-4L package options for faster switching and clean gate waveforms.

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