TSM2N7002AKDCU6 RFG

Taiwan Semiconductor
821-TSM2N7002KDCU6
TSM2N7002AKDCU6 RFG

Mfr.:

Description:
MOSFETs 60V, 0.22A, Dual N-Channel Power MOSFET

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 3.904

Stock:
3.904 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
2,31 kr. 2,31 kr.
1,40 kr. 14,00 kr.
0,88 kr. 88,00 kr.
0,656 kr. 328,00 kr.
0,567 kr. 567,00 kr.
Full Reel (Order in multiples of 3000)
0,485 kr. 1.455,00 kr.
0,388 kr. 2.328,00 kr.
0,358 kr. 3.222,00 kr.
0,343 kr. 8.232,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Taiwan Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-363-6
N-Channel
2 Channel
60 V
220 mA
2.5 Ohms
- 20 V, 20 V
2.5 V
91 nC
- 55 C
+ 150 C
240 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand: Taiwan Semiconductor
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Fall Time: 50 ns
Forward Transconductance - Min: 0.5 S
Product Type: MOSFETs
Rise Time: 10 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 20 ns
Typical Turn-On Delay Time: 4 ns
Part # Aliases: TSM2N7002AKDCU6
Unit Weight: 7,500 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
MXHTS:
8541210100
ECCN:
EAR99

TSM2N7002 N-Channel Power MOSFETs

Taiwan Semiconductor TSM2N7002 N-Channel Power MOSFETs feature a low drain-source on-state resistance (RDS(ON)), that minimizes conductive losses. The N-channel power MOSFETs enable a low gate charge for fast power switching. These power MOSFETs are available in single and dual configuration variants. The TSM2N7002 power MOSFETs operate at 60V drain-source breakdown voltage and -55°C to +150°C temperature range. These N-channel power MOSFETs are ideal for low side load switching, level shift circuits, and general switch circuits.