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TK210V65Z,LQ

Name: Toshiba TK210V65Z,LQ
Brand: Toshiba
SKU: 757-TK210V65ZLQ
Price: 12.01 DKK
Availability: OutOfStock

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Mouser No:

757-TK210V65ZLQ

Mfr. No:

TK210V65Z,LQ

Mfr.:

Toshiba

Description:

MOSFETs MOSFET 650V 210mOhms DTMOS-VI

Datasheet:

TK210V65Z,LQ Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Minimum: 2500 Multiples: 2500

Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 2500)
	12,01 kr.	30.025,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	15 A
Rds On - Drain-Source Resistance:	210 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	130 W
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	DTMOS VI
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	66 ns
Typical Turn-On Delay Time:	34 ns
Unit Weight:	161,193 mg

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Datasheet

TK210V65Z,LQ Datasheet (PDF)

Application Notes

Models

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Test/Quality Data

Reliability Data

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.