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TK170V65Z,LQ

Name: Toshiba TK170V65Z,LQ
Brand: Toshiba
SKU: 757-TK170V65ZLQ
Price: 30.06 DKK
Availability: InStock

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Mouser No:

757-TK170V65ZLQ

Mfr. No:

TK170V65Z,LQ

Mfr.:

Toshiba

Description:

MOSFETs MOSFET 650V 170mOhms DTMOS-VI

Datasheet:

TK170V65Z,LQ Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK170V65Z,LQ

In Stock: 4.720

Stock:: 4.720 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 4720 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	30,06 kr.	30,06 kr.
	20,37 kr.	203,70 kr.
	16,56 kr.	1.656,00 kr.
	16,11 kr.	8.055,00 kr.
	14,62 kr.	14.620,00 kr.
Full Reel (Order in multiples of 2500)
	13,65 kr.	34.125,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	170 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	16 ns
Series:	DTMOS VI
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	37 ns

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Datasheet

TK170V65Z,LQ Datasheet (PDF)

Application Notes

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Test/Quality Data

Reliability Tests Report

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.